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Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect 期刊论文
Nanoscale Advances, 2023, 卷号: 5, 期号: 9, 页码: 2530-2536
作者:  Y. Chen, K. Jiang, X. Sun, Z.-H. Zhang, S. Zhang, J. Ben, B. Wang, L. Guo and D. Li
收藏  |  浏览/下载：1/0  |  提交时间：2024/07/01
Mechanistic understanding of the interfacial properties of metal–PtSe2 contacts 期刊论文
Nanoscale, 2023, 卷号: 15, 期号: 32, 页码: 13252-13261
作者:  L. J. Qi, M. Q. Che, M. X. Liu, B. Wang, N. Zhang, Y. T. Zou, X. J. Sun, Z. M. Shi, D. B. Li and S. J. Li
收藏  |  浏览/下载：0/0  |  提交时间：2024/07/04
Review of ultraviolet photodetectors based on micro/nano-structured wide bandgap semiconductor oxide 期刊论文
Chinese Optics, 2022, 卷号: 15, 期号: 5, 页码: 912-928
作者:  X. Chen;  C. Zhou;  K.-W. Liu and D.-Z. Shen
收藏  |  浏览/下载：5/0  |  提交时间：2023/06/14
Analysis of photoelectric characteristics of a light-damaged schottky perovskite detector 期刊论文
Chinese Optics, 2022, 卷号: 15, 期号: 4, 页码: 668-674
作者:  J.-Y. Qu;  Y.-P. Wang;  J.-J. Sun;  F. Chen;  D.-X. Zhao and C.-C. Tian
收藏  |  浏览/下载：3/0  |  提交时间：2023/06/14
Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity 期刊论文
Optics Letters, 2022, 卷号: 47, 期号: 6, 页码: 1561-1564
作者:  G. S. Huang;  C. S. Chu;  L. Guo;  Z. P. Liu;  K. Jiang
收藏  |  浏览/下载：0/0  |  提交时间：2023/06/14
Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer 期刊论文
Small, 2022, 卷号: 18, 期号: 24, 页码: 7
作者:  Y. N. Wei;  X. G. Hu;  J. W. Zhang;  B. Tong;  J. H. Du
收藏  |  浏览/下载：4/0  |  提交时间：2023/06/14
Numerical investigations into polarization-induced self-powered GaN-based MSM photodetectors 期刊论文
Applied Optics, 2021, 卷号: 60, 期号: 35, 页码: 10975-10983
作者:  J. Wang;  C. Chu;  J. Che;  H. Shao;  Y. Zhang
收藏  |  浏览/下载：5/0  |  提交时间：2022/06/13
Phase change material based hot electron photodetection 期刊论文
Nanoscale, 2021, 卷号: 13, 期号: 2, 页码: 1311-1317
作者:  S. K. Chamoli;  G. Verma;  S. C. Singh and C. Guo
收藏  |  浏览/下载：4/0  |  提交时间：2022/06/13
Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben
收藏  |  浏览/下载：3/0  |  提交时间：2022/06/13
Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
作者:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben
收藏  |  浏览/下载：3/0  |  提交时间：2023/06/14

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