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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate 期刊论文 ieee电子器件汇刊, 2014 Liu, Xiang; Wang, Lisa Ling; Ning, Ce; Hu, Hehe; Yang, Wei; Wang, Ke; Yoo, Seong Yeol; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 Amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs)  copper diffusion  copper gate  stacked gate insulator  threshold voltage shift  THIN-FILM TRANSISTORS   Graphene mobility enhancement by organosilane interface engineering 期刊论文 应用物理学快报, 2013 Lv, Hongming; Wu, Huaqiang; Xiao, Ke; Zhu, Weinan; Xu, Huilong; Zhang, Zhiyong; Qian, He 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 CHEMICAL-VAPOR-DEPOSITION  SELF-ASSEMBLED MONOLAYERS  FIELD-EFFECT TRANSISTORS  LARGE-AREA  COPPER CATALYST  FILMS  HYSTERESIS  ELECTRODES   Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition 期刊论文 nano letters, 2011 Yan, Kai; Peng, Hailin; Zhou, Yu; Li, Hui; Liu, Zhongfan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Graphene  bilayer  Bernal stacking  CVD  epitaxy  band gap opening  LARGE-AREA  RAMAN-SPECTROSCOPY  ELECTRIC-FIELD  FILMS   Challenges of 22 nm and beyond CMOS technology 期刊论文 science in china series f information sciences, 2009 Huang Ru; Wu HanMing; Kang JinFeng; Xiao DeYuan; Shi XueLong; An Xia; Tian Yu; Wang RunSheng; Zhang LiangLiang; Zhang Xing; Wang YangYuan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/12 CMOS technology  22 nm technology node  device architectures  metal gate/high K dielectrics  ultra low K dielectrics  SILICON NANOWIRE TRANSISTORS  CARRIER-TRANSPORT  CHANNEL FINFETS  DRAIN STRESSORS  CARBON SOURCE/DRAIN  GATE STACK  METAL-GATE  HIGH-K  RELIABILITY CHARACTERISTICS  PERFORMANCE ENHANCEMENT