Challenges of 22 nm and beyond CMOS technology

doi:10.1007/s11432-009-0167-9

CORC > 北京大学 > 信息科学技术学院

	Challenges of 22 nm and beyond CMOS technology
	Huang Ru ; Wu HanMing ; Kang JinFeng ; Xiao DeYuan ; Shi XueLong ; An Xia ; Tian Yu ; Wang RunSheng ; Zhang LiangLiang ; Zhang Xing ; Wang YangYuan
刊名	science in china series f information sciences
	2009
关键词	CMOS technology 22 nm technology node device architectures metal gate/high K dielectrics ultra low K dielectrics SILICON NANOWIRE TRANSISTORS CARRIER-TRANSPORT CHANNEL FINFETS DRAIN STRESSORS CARBON SOURCE/DRAIN GATE STACK METAL-GATE HIGH-K RELIABILITY CHARACTERISTICS PERFORMANCE ENHANCEMENT
DOI	10.1007/s11432-009-0167-9
英文摘要	It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially integrated into 22 nm and beyond technology nodes, including double patterning technology with high NA water immersion lithography and EUV lithography, new device architectures, high K/metal gate (HK/MG) stack and integration technology, mobility enhancement technologies, source/drain engineering and advanced copper interconnect technology with ultra-low-k process.; Computer Science, Information Systems; SCI(E); 13; REVIEW; 9; 1491-1533; 52
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/245411]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang Ru,Wu HanMing,Kang JinFeng,et al. Challenges of 22 nm and beyond CMOS technology[J]. science in china series f information sciences,2009.
APA	Huang Ru.,Wu HanMing.,Kang JinFeng.,Xiao DeYuan.,Shi XueLong.,...&Wang YangYuan.(2009).Challenges of 22 nm and beyond CMOS technology.science in china series f information sciences.
MLA	Huang Ru,et al."Challenges of 22 nm and beyond CMOS technology".science in china series f information sciences (2009).