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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2015 Liu, Xiang; Wang, Lisa Ling; Hu, Hehe; Lu, Xinhong; Wang, Ke; Wang, Gang; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 a-IGZO TFTs  back-channel-etch (BCE)  plasma treatment  threshold voltage shift  THRESHOLD VOLTAGE  SHIFT  OXIDE  GATE   Comparative study of a-IGZO TFTs with direct current and radio frequency sputtered channel layers 期刊论文 JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2015 Deng, Wei; Xiao, Xiang; He, Xin; Lee, Chia-Yu; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 amorphous indium-gallium-zinc oxide (a-IGZO)  RF sputtering  DC sputtering  oxygen vacancy  stability  THIN-FILM TRANSISTORS  TRANSPORT   A Multi-V-th a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions 期刊论文 ieee electron device letters, 2014 He, Xin; Xiao, Xiang; Shao, Yang; Deng, Wei; Leng, Chuanli; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 a-IGZO  TFT  multi threshold voltage  anodic oxidation  FILM TRANSISTORS  OXIDE  PERFORMANCE  ALUMINUM   Effect of O-2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced V-th Shift of a-IGZO TFTs 期刊论文 ieee电子器件汇刊, 2013 Xiao, Xiang; Deng, Wei; Chi, Shipeng; Shao, Yang; He, Xin; Wang, Longyan; Zhang, Shengdong 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/11 Amorphous indium-gallium-zinc-oxide (a-IGZO)  donor-like states  instability  O-2 flow rate  thin film transistors (TFTs)  FILM TRANSISTORS  MOBILITY  VOLTAGE   Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films 期刊论文 固体薄膜, 2013 Yao, Jianke; Gong, Li; Xie, Lei; Zhang, Shengdong 收藏  |  浏览/下载：11/0  |  提交时间：2015/11/13 Amorphous indium gallium zinc oxide  Direct current sputtering  Radio-frequency sputtering  Oxygen vacancy  Fermi level  Work function