×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
北京大学 [10]
内容类型
期刊论文 [10]
发表日期
2015 [1]
2014 [4]
2013 [4]
2011 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共10条,第1-10条
帮助
限定条件
专题:北京大学
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Chen, Ji
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Pan, Chih-Hung
;
Zhang, Rui
;
Lou, Jen-Chung
;
Chu, Tian-Jian
;
Wu, Cheng-Hsien
;
Chen, Min-Chen
;
Hung, Ya-Chi
;
Syu, Yong-En
;
Zheng, Jin-Cheng
;
Sze, Simon M.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
RRAM
nitrogen buffering effect
electric field force
NH3 treatment
SUPERCRITICAL CO2 FLUID
SWITCHING MEMORY
RESISTANCE
IMPROVEMENT
RRAM
MECHANISM
UNIFORMITY
CONDUCTION
DEVICE
Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor
期刊论文
应用物理学快报, 2014
Chen, Hsin-lu
;
Chang, Ting-Chang
;
Young, Tai-Fa
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
;
Zhang, Rui
;
Huang, Sheng-Yao
;
Chen, Kai-Huang
;
Lou, J. C.
;
Chen, Min-Chen
;
Shih, Chih-Cheng
;
Huang, Syuan-Yong
;
Chen, Jung-Hui
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/11
RANDOM-ACCESS MEMORY
PASSIVATION
RRAM
TFT
Hydrogen induced redox mechanism in amorphous carbon resistive random access memory
期刊论文
nanoscale research letters, 2014
Chen, Yi-Jiun
;
Chen, Hsin-Lu
;
Young, Tai-Fa
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
;
Zhang, Rui
;
Chen, Kai-Huang
;
Lou, Jen-Chung
;
Chu, Tian-Jian
;
Chen, Jung-Hui
;
Bao, Ding-Hua
;
Sze, Simon M.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
Carbon
Hydrogen redox
Conjugation double bond
RRAM
CO2 FLUID TREATMENT
RRAM DEVICES
HOPPING CONDUCTION
SILICON
TRANSITION
ORIGIN
FILMS
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
期刊论文
journal of supercritical fluids, 2014
Chang, Kuan-Chang
;
Chen, Jung-Hui
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Huang, Syuan-Yong
;
Zhang, Rui
;
Chen, Kai-Huang
;
Syu, Yong-En
;
Chang, Geng-Wei
;
Chu, Tian-Jian
;
Liu, Guan-Ru
;
Su, Yu-Ting
;
Chen, Min-Chen
;
Pan, Jhih-Hong
;
Liao, Kuo-Hsiao
;
Tai, Ya-Hsiang
;
Young, Tai-Fa
;
Sze, Simon M.
;
Ai, Chi-Fong
;
Wang, Min-Chuan
;
Huang, Jen-Wei
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
Supercritical fluid
RRAM
Hydration-dehydration reaction
Tin doping
ELECTROLYTE-BASED RERAM
CONDUCTIVE FILAMENTS
FILM
Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory
期刊论文
ieee electron device letters, 2014
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Chen, Kai-Huang
;
Zhang, Rui
;
Wang, Zhi-Yang
;
Chen, Jung-Hui
;
Young, Tai-Fa
;
Chen, Min-Chen
;
Chu, Tian-Jian
;
Huang, Syuan-Yong
;
Syu, Yong-En
;
Bao, Ding-Hua
;
Sze, Simon M.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
RRAM
lithium silicate
dual ion effect
I-V
RESISTIVE SWITCHING MEMORIES
CO2 FLUID TREATMENT
HOPPING CONDUCTION
OXIDE RRAM
DEVICES
ORIGIN
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
期刊论文
应用物理杂志, 2013
Zhang, Rui
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Chang, Kuan-Chang
;
Chen, Kai-Huang
;
Lou, Jen-Chung
;
Young, Tai-Fa
;
Chen, Jung-Hui
;
Huang, Syuan-Yong
;
Chen, Min-Chen
;
Shih, Chih-Cheng
;
Chen, Hsin-Lu
;
Pan, Jhih-Hong
;
Tung, Cheng-Wei
;
Syu, Yong-En
;
Sze, Simon M.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
CO2 FLUID TREATMENT
HOPPING CONDUCTION
OXIDE
DEVICES
RRAM
NANOCRYSTALS
BIPOLAR
ORIGIN
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
期刊论文
应用物理学快报, 2013
Su, Yu-Ting
;
Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Zhang, Rui
;
Lou, J. C.
;
Chen, Jung-Hui
;
Young, Tai-Fa
;
Chen, Kai-Huang
;
Tseng, Bae-Heng
;
Shih, Chih-Cheng
;
Yang, Ya-Liang
;
Chen, Min-Chen
;
Chu, Tian-Jian
;
Pan, Chih-Hung
;
Syu, Yong-En
;
Sze, Simon M.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/11
CO2 FLUID TREATMENT
HOPPING CONDUCTION
RRAM
IMPROVEMENT
MECHANISMS
DEVICES
ORIGIN
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
期刊论文
应用物理学快报, 2013
Chen, Kai-Huang
;
Zhang, Rui
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
;
Lou, J. C.
;
Young, Tai-Fa
;
Chen, Jung-Hui
;
Shih, Chih-Cheng
;
Tung, Cheng-Wei
;
Syu, Yong-En
;
Sze, Simon M.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
CO2 FLUID TREATMENT
RRAM
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
期刊论文
ieee electron device letters, 2013
Chang, Kuan-Chang
;
Pan, Chih-Hung
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Zhang, Rui
;
Lou, Jen-Chung
;
Young, Tai-Fa
;
Chen, Jung-Hui
;
Shih, Chih-Cheng
;
Chu, Tian-Jian
;
Chen, Jian-Yu
;
Su, Yu-Ting
;
Jiang, Jhao-Ping
;
Chen, Kai-Huang
;
Huang, Hui-Chun
;
Syu, Yong-En
;
Gan, Der-Shin
;
Sze, Simon M.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
Hopping conduction
resistive random access memory (RRAM)
supercritical fluid
RERAM
Surface bioactivity modification of titanium by CO2 plasma treatment and induction of hydroxyapatite: In vitro and in vivo studies
期刊论文
应用表面科学, 2011
Hu, Xixue
;
Shen, Hong
;
Shuai, Kegang
;
Zhang, Enwei
;
Bai, Yanjie
;
Cheng, Yan
;
Xiong, Xiaoling
;
Wang, Shenguo
;
Fang, Jing
;
Wei, Shicheng
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2015/11/10
Titanium
Surface modification
Carbon dioxide plasma
Hydroxyapatite
Bioactivity
BONE-LIKE APATITE
ION-IMPLANTATION
GROWTH-FACTOR
POLY(LACTIDE-CO-GLYCOLIDE)
CALCIUM
ALLOYS
METAL
TI
IMMOBILIZATION
POLYURETHANE
©版权所有 ©2017 CSpace - Powered by
CSpace