CORC

浏览/检索结果: 共20条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载:18/0  |  提交时间:2020/07/11
Two-dimensional analytical model for asymmetric dual-gate tunnel FETs 期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: Vol.56 No.1, 页码: 014301
作者:  Zhang,Yong Feng;  Guan,Bang Gui;  Xu,Hui Fang;  Dai,Yue Hua
收藏  |  浏览/下载:6/0  |  提交时间:2019/04/22
Reexamination of the role of the Delta* resonances in the pp -> nK(+)Sigma(+) reaction 期刊论文
PHYSICAL REVIEW C, 2015, 卷号: 92, 页码: 8
作者:  Xie, Ju-Jun;  Wang, Xiao-Yun;  Cao, Xu;  Chen, Xu-Rong
收藏  |  浏览/下载:10/0  |  提交时间:2018/05/31
Reexamination of the role of the Delta* resonances in the pp -> nK(+)Sigma(+) reaction 期刊论文
PHYSICAL REVIEW C, 2015, 卷号: 92, 期号: 1, 页码: 15202
作者:  Wang, XY;  Cao, X;  Xie, JJ;  Chen, XR
收藏  |  浏览/下载:26/0  |  提交时间:2016/11/21
A modularized noise analysis method with its application in readout circuit design 期刊论文
VLSI Design, 2015, 卷号: 2015, 页码: 1-10
作者:  Wang X(王霄);  Shi ZL(史泽林);  Xu BS(徐保树)
收藏  |  浏览/下载:13/0  |  提交时间:2015/10/23
A new CDS structure for high density FPA with low power 期刊论文
VLSI Design, 2015, 卷号: 2015, 页码: 1-7
作者:  Wang X(王霄);  Shi ZL(史泽林)
收藏  |  浏览/下载:24/0  |  提交时间:2015/03/30
A 2-D analytical potential model for the oxide layer and space charge region of MOSFETs in subthreshold 期刊论文
Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2013, 卷号: Vol.41 No.11, 页码: 2237-2241
作者:  Xu,Chun-Xia;  Wang,Bao-Tong;  Han,Ming-Jun;  Wang,Min;  Ke,Dao-Ming
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/24
Constraining the high-density behavior of the nuclear equation of state from strangeness production in heavy-ion collisions 期刊论文
PHYSICAL REVIEW C, 2011, 卷号: 83, 页码: 4
作者:  Feng, Zhao-Qing
收藏  |  浏览/下载:9/0  |  提交时间:2018/05/31
Dynamics of strangeness production in heavy-ion collisions near threshold energies 期刊论文
PHYSICAL REVIEW C, 2010, 卷号: 82, 期号: 5, 页码: 4
作者:  Feng, Zhao-Qing;  Jin, Gen-Ming
收藏  |  浏览/下载:14/0  |  提交时间:2011/04/20
考虑量子效应的双栅MOSFET的阈电压解析建模(英文) 期刊论文
2010, 2010
张大伟; 田立林; 余志平; Zhang Dawei; Tian Lilin; Yu Zhiping
收藏  |  浏览/下载:2/0


©版权所有 ©2017 CSpace - Powered by CSpace