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STEM multiplication nano-moiré method with large field of view and high sensitivity 期刊论文
NANOTECHNOLOGY, 2021, 卷号: 32, 期号: 47, 页码: 475705
作者:  Zhao, Yao;   Wu, Dongliang;   Zhou, Jiangfan;   Wen, Huihui;   Liu, Zhanwei;   Wang, Qinghua;   Liu, Chao
收藏  |  浏览/下载：7/0  |  提交时间：2022/03/23
Mid Wavelength Type II InAs/GaSb Superlattice Avalanche Photodiode With AlAsSb Multiplication Layer 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2021, 卷号: 42, 期号: 11, 页码: 1634-1637
作者:  Yan, Shaolong;   Huang, Jianliang;   Zhang, Yanhua;   Ma, Wenquan
收藏  |  浏览/下载：21/0  |  提交时间：2022/03/28
High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87 as the multiplication layer 期刊论文
PHOTONICS RESEARCH, 2020, 卷号: 8, 期号: 5, 页码: 755-759
作者:  Jianliang Huang;   Chengcheng Zhao;   Biying Nie;   Shiyu Xie;   Dominic C. M. Kwan;   Xiao Meng;   Yanhua Zhang;   Diana L. Huffaker;   Wenquan Ma
收藏  |  浏览/下载：19/0  |  提交时间：2021/06/22
Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes 期刊论文
Journal of Crystal Growth, 2018, 卷号: 482, 页码: 70-74
作者:  Yuexi Lyu;  Xi Han;  Yaoyao Sun;  Zhi Jiang;  Chunyan Guo;  Wei Xiang;  Yinan Dong;  Jie Cui;  Yuan Yao;  Dongwei Jiang;  Guowei Wang;  Yingqiang Xu;  Zhichuan Niu
收藏  |  浏览/下载：34/0  |  提交时间：2019/09/22
Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes 期刊论文
Journal of Crystal Growth, 2017, 卷号: 482, 页码: 70–74
作者:  Yuexi Lyu;  Xi Han;  Yaoyao Sun;  Zhi Jiang;  Chunyan Guo
收藏  |  浏览/下载：47/0  |  提交时间：2018/06/15
A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers 期刊论文
optics communications, 2016, 卷号: 374, 页码: 114-118
Guipeng Liu; WenjieChen; LinshengLiu; PengJin; YonghuiTian; JianhongYang
收藏  |  浏览/下载：12/0  |  提交时间：2017/03/10
Resonant tunneling diode with a multiplication region for light detection 期刊论文
optics communications, 2014, 卷号: 331, 页码: 94-97
Dong, Yu; Wang, Guanglong; Ni, Haiqiao; Chen, Jianhui; Gao, Fengqi; Qiao, Zhongtao; Niu, Zhichuan
收藏  |  浏览/下载：26/0  |  提交时间：2015/03/19
Ultra Low Dark Current, High Responsivity and Thin Multiplication Region in InGaAs/InP Avalanche Photodiodes 期刊论文
chinese physics letters, 2012, 卷号: 29, 期号: 11, 页码: 118503
Li B (Li Bin); Yang HW (Yang Huai-Wei); Gui Q (Gui Qiang); Yang XH (Yang Xiao-Hong); Wang J (Wang Jie); Wang XP (Wang Xiu-Ping); Liu SQ (Liu Shao-Qing); Han Q (Han Qin)
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/27
An intermediate-band-assisted avalanche multiplication in inas/ingaas quantum dots-in-well infrared photodetector 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: 3
作者:  Lin, L.;  Zhen, H. L.;  Zhou, X. H.;  Li, N.;  Lu, W.
收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12
GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 33, 页码: 335102
He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC
收藏  |  浏览/下载：25/0  |  提交时间：2012/01/06

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