A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers

	A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers
	Guipeng Liu ; WenjieChen ; LinshengLiu ; PengJin ; YonghuiTian ; JianhongYang
刊名	optics communications
	2016
卷号	374 页码:114-118
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27688]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Guipeng Liu,WenjieChen,LinshengLiu,et al. A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers[J]. optics communications,2016,374:114-118.
APA	Guipeng Liu,WenjieChen,LinshengLiu,PengJin,YonghuiTian,&JianhongYang.(2016).A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers.optics communications,374,114-118.
MLA	Guipeng Liu,et al."A theory study of the multiplication characteristics of InP/InGaAs avalanche photodiodes with double multiplication layers and double charge layers".optics communications 374(2016):114-118.