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CORC

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Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability 期刊论文
journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:  Liu J;  Tan PH
收藏  |  浏览/下载：91/4  |  提交时间：2011/07/05
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载：19/0  |  提交时间：2012/02/06
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载：46/4  |  提交时间：2011/07/15
Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick ni silicide polycrystalline p-si composite anode 期刊论文
Optics express, 2010, 卷号: 18, 期号: 15, 页码: 15942-15947
作者:  Li, Y. Z.;  Wang, Z. L.;  Luo, H.;  Wang, Y. Z.;  Xu, W. J.
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Charge transfer and optical phonon mixing in few-layer graphene chemically doped with sulfuric acid 期刊论文
physical review b, 2010, 卷号: 82, 期号: 24, 页码: article no.245423
作者:  Tan PH
收藏  |  浏览/下载：80/9  |  提交时间：2011/07/05
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 8, 页码: art. no. 087802
Ruan J; Yu TJ; Jia CY; Tao RC; Wang ZG; Zhang GY
收藏  |  浏览/下载：89/2  |  提交时间：2010/03/08
A novel implantable multichannel silicon-based microelectrode 期刊论文
chinese physics, 2007, 卷号: 16, 期号: 7, 页码: 2116-2119
Sui XH (Sui Xiao-Hong); Zhang RX (Zhang Ruo-Xin); Pei WH (Pei Wei-Hua); Chen HD (Chen Hong-Da)
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29
MEMS  
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:  Jiang DS
收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11
Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2006, 卷号: 133, 期号: 1-3, 页码: 117-123
Zhao HQ (Zhao Hong-Quan); Yu LJ (Yu Li-Juan); Huang YZ (Huang Yong-Zhen); Wang YT (Wang Yu-Tian)
收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11
InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth 期刊论文
electronics letters, 2005, 卷号: 41, 期号: 25, 页码: 1400-1402
作者:  Jin P
收藏  |  浏览/下载：52/0  |  提交时间：2010/04/11

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