InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

	InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth
	Jin P
刊名	electronics letters
	2005
卷号	41 期号:25 页码:1400-1402
关键词	SPECTRUM
ISSN号	0013-5194
通讯作者	liu, n, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: pengjin@red.semi.ac.cn
中文摘要	broadband superluminescent diodes are fabricated by using inas/gaas self-assembled quantum dots as an active region. the devices exhibited properties of 110 run bandwidth with the centre of 1.1 mu m and above 30 mw output under pulse injection at room temperature.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10906]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P. InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth[J]. electronics letters,2005,41(25):1400-1402.
APA	Jin P.(2005).InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth.electronics letters,41(25),1400-1402.
MLA	Jin P."InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth".electronics letters 41.25(2005):1400-1402.