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Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices 期刊论文
JOURNAL OF DIFFERENTIAL EQUATIONS, 2006, 卷号: 225, 期号: 2, 页码: 411-439
作者:  Hsiao, L;  Wang, S
收藏  |  浏览/下载:13/0  |  提交时间:2018/07/30
Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors 期刊论文
JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS, 2002, 卷号: 268, 期号: 1, 页码: 184-199
作者:  Gasser, I;  Hsiao, L;  Markowich, PA;  Wang, S
收藏  |  浏览/下载:15/0  |  提交时间:2018/07/30
Quasineutral limit of a standard drift diffusion model for semiconductors 期刊论文
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 2002, 卷号: 45, 期号: 1, 页码: 33-41
作者:  Xiao, L;  Markowich, PA;  Wang, S
收藏  |  浏览/下载:17/0  |  提交时间:2018/07/30
The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors 期刊论文
CHINESE ANNALS OF MATHEMATICS SERIES B, 2001, 卷号: 22, 期号: 2, 页码: 195-210
作者:  Hsiao, L;  Wang, S
收藏  |  浏览/下载:11/0  |  提交时间:2018/07/30
The global weak solution and relaxation limits of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors 期刊论文
MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES, 2000, 卷号: 10, 期号: 9, 页码: 1333-1361
作者:  Hsiao, L
收藏  |  浏览/下载:5/0  |  提交时间:2018/07/30
The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations 期刊论文
JOURNAL OF DIFFERENTIAL EQUATIONS, 2000, 卷号: 165, 期号: 2, 页码: 315-354
作者:  Hsiao, L;  Zhang, KJ
收藏  |  浏览/下载:12/0  |  提交时间:2018/07/30


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