Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices

doi:10.1016/j.jde.2006.01.022

	Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
	Hsiao, L ; Wang, S
刊名	JOURNAL OF DIFFERENTIAL EQUATIONS
	2006-06-15
卷号	225 期号:2 页码:411-439
关键词	quasineutral limit time-dependent drift-diffusion equations p-n junction multiple scaling asymptotic expansions gimel-weighted Liapunov-type functional
ISSN号	0022-0396
DOI	10.1016/j.jde.2006.01.022
英文摘要	In this paper the vanishing Debye length limit of the bipolar time-dependent drift-diffusion-Poisson equations modelling insulated semiconductor devices with p-n junctions (i.e., with a fixed bipolar background charge) is studied. For sign-changing and smooth doping profile with 'good' boundary conditions the quasineutral limit (zero-Debye-length limit) is performed rigorously by using the multiple scaling asymptotic expansions of a singular perturbation analysis and the carefully performed classical energy methods. The key point in the proof is to introduce a 'density' transform and two L-weighted Liapunov-type functionals first, and then to establish the entropy production integration inequality, which yields the uniform estimate with respect to the scaled Debye length. The basic point of the idea involved here is to control strong nonlinear oscillation by the interaction between the entropy and the entropy dissipation. (c) 2006 Elsevier Inc. All rights reserved.
WOS研究方向	Mathematics
语种	英语
出版者	ACADEMIC PRESS INC ELSEVIER SCIENCE
WOS记录号	WOS:000238101400002
内容类型	期刊论文
源URL	[http://ir.amss.ac.cn/handle/2S8OKBNM/3284]
专题	中国科学院数学与系统科学研究院
通讯作者	Wang, S
作者单位	1.Beijing Univ Technol, Coll Appl Sci, Beijing 100022, Peoples R China 2.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Hsiao, L,Wang, S. Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2006,225(2):411-439.
APA	Hsiao, L,&Wang, S.(2006).Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices.JOURNAL OF DIFFERENTIAL EQUATIONS,225(2),411-439.
MLA	Hsiao, L,et al."Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices".JOURNAL OF DIFFERENTIAL EQUATIONS 225.2(2006):411-439.