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科研机构
北京大学 [16]
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期刊论文 [16]
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2017 [1]
2015 [1]
2014 [4]
2012 [2]
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内容类型:期刊论文
专题:北京大学
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A tunable transformer-based CMOS directional coupler for UHF RFID readers
期刊论文
IEICE ELECTRONICS EXPRESS, 2017
Zheng, Yongan
;
Ye, Le
;
Hao, Xiucheng
;
Guo, Ying
;
Wang, Runhua
;
Liao, Huailin
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
CMOS
current cancellation
directional coupler
isolation
transformer-based
UHF RFID
Noise coupling between through-silicon vias and active devices for 20/14-nm technology nodes
期刊论文
aip advances, 2015
Fang, Runiu
;
Sun, Xin
;
Miao, Min
;
Jin, Yufeng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/17
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio
期刊论文
ieee electron device letters, 2014
Xu, Zhe
;
Wang, Jinyan
;
Cai, Yong
;
Liu, Jingqian
;
Jin, Chunyan
;
Yang, Zhenchuan
;
Wang, Maojun
;
Yu, Min
;
Xie, Bing
;
Wu, Wengang
;
Ma, Xiaohua
;
Zhang, Jincheng
;
Hao, Yue
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
Post-gate annealing (PGA)
GaN
enhancement mode
MOSFET
ON/OFF current ratio
mesa isolation current
GAN MIS-HEMTS
AL2O3/GAN MOSFET
INTERFACE
High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability
期刊论文
日本应用物理学杂志, 2014
He, Yandong
;
Zhang, Ganggang
;
Zhang, Xing
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
INTERFACE TRAPS
SMART POWER
LDMOS
PHYSICS
DCIV
Total ionizing dose (TID) effect and single event effect (SEE) in quasi-SOI nMOSFETs
期刊论文
semiconductor science and technology, 2014
Tan, Fei
;
Huang, Ru
;
An, Xia
;
Wu, Weikang
;
Feng, Hui
;
Huang, Liangxi
;
Fan, Jiewen
;
Zhang, Xing
;
Wang, Yangyuan
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/13
quasi-SOI device
single event effect (SEE)
total ionizing dose (TID)
worst case
TECHNOLOGIES
TRANSISTOR
CANDIDATE
MOSFET
UPSET
A CMOS compatible process for monolithic integration of high-aspect-ratio bulk silicon microstructures
期刊论文
Science China(Information Sciences), 2014
QIAN Liang
;
YANG ZhenChuan
;
YAN GuiZhen
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2017/12/03
monolithic integration
trench isolation
CMOS compatibility
high-aspect-ratio
bulk micromachining
Multiregion DCIV: A Sensitive Tool for Characterizing the Si/SiO2 Interfaces in LDMOSFETs
期刊论文
ieee electron device letters, 2012
He, Yandong
;
Zhang, Ganggang
;
Han, Lin
;
Zhang, Xing
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/10
Interface traps
multiregion direct-current current-voltage (MR-DCIV)
nondestructive characterization technique
shallow trench isolation (STI)-based LDMOSFET
MOS-TRANSISTORS
TRAPS
DEGRADATION
Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique
期刊论文
日本应用物理学杂志, 2012
He, Yandong
;
Zhang, Ganggang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/13
SMART POWER
Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on nMOSFETs
期刊论文
ieee 纳米技术汇刊, 2011
Wu, Wei
;
Du, Gang
;
Liu, Xiaoyan
;
Sun, Lei
;
Kang, Jinfeng
;
Han, Ruqi
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/11/10
Mobility
shallow trench isolation (STI) stress
strain
threshold voltage
N-MOSFETS
DIFFUSION
CMOS
SI
DEVICES
LAYERS
A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation
期刊论文
应用物理杂志, 2010
Wang, Sihao
;
Pei, Yunpeng
;
Huang, Ru
;
Wang, Wenhua
;
Liu, Wen
;
Xue, Shoubin
;
An, Xia
;
Tian, Jingquan
;
Wang, Yangyuan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
elemental semiconductors
isolation technology
MOSFET
semiconductor device breakdown
semiconductor doping
silicon
MOS DEVICES
CO-60
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