A model for radiation-induced off-state leakage current in N-channel   metal-oxide-semiconductor transistors with shallow trench isolation

doi:10.1063/1.3277017

CORC > 北京大学 > 信息科学技术学院

	A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation
	Wang, Sihao ; Pei, Yunpeng ; Huang, Ru ; Wang, Wenhua ; Liu, Wen ; Xue, Shoubin ; An, Xia ; Tian, Jingquan ; Wang, Yangyuan
刊名	应用物理杂志
	2010
关键词	elemental semiconductors isolation technology MOSFET semiconductor device breakdown semiconductor doping silicon MOS DEVICES CO-60
DOI	10.1063/1.3277017
英文摘要	A radiation-induced leakage current model in deep submicron bulk silicon N-channel metal-oxide-semiconductor field effect transistor (NMOSFET) is proposed in this paper for circuit simulations. The model takes into account the impact of the substrate doping concentration, the angle of shallow trench isolation (STI) region, and the junction depth of source/drain, which can predict the off-state leakage current of the NMOSFET with STI region irradiated at different radiation doses. The model is verified by comparing with the experimental results. The model can be easily implemented into the circuit simulator to evaluate the impact of total ionizing dose effect on the performance of circuit.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000274180600119&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 1; ARTICLE; 2; 107
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152770]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Sihao,Pei, Yunpeng,Huang, Ru,et al. A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation[J]. 应用物理杂志,2010.
APA	Wang, Sihao.,Pei, Yunpeng.,Huang, Ru.,Wang, Wenhua.,Liu, Wen.,...&Wang, Yangyuan.(2010).A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation.应用物理杂志.
MLA	Wang, Sihao,et al."A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation".应用物理杂志 (2010).