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科研机构
北京大学 [13]
厦门大学 [2]
内容类型
其他 [15]
发表日期
2014 [1]
2013 [1]
2012 [2]
2011 [1]
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2009 [3]
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The effect of dielectric charging on capacitive MEMS switch
其他
2014-01-01
Huang, Qin Wen
;
Li, Xiang Guang
;
Wang, Yun Hui
;
Jia, Yu-Bin
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/17
Spatial filtering effect of tip clearance using capacitance displacement sensor
其他
2013-01-01
Xie, Haihe
;
Yan, Huangping
;
Huang, Yuanqing
;
黄元庆
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2015/07/22
Capacitance
Manufacture
Sensors
Signal sampling
A Physical Based Analytic Model of RRAM Operation for Circuit Simulation
其他
2012-01-01
Huang, P.
;
Liu, X. Y.
;
Li, W. H.
;
Deng, Y. X.
;
Chen, B.
;
Lu, Y.
;
Gao, B.
;
Zeng, L.
;
Wei, K. L.
;
Du, G.
;
Zhang, X.
;
Kang, J. F.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/13
ZnTiO3 doping effect on dielectric properties of CCTO ceramics via a molten salt process
其他
2012-01-01
Yu, Rong
;
Cao, Zeliang
;
Xue, Hao
;
Xiong, Zhaoxian
;
薛昊
;
熊兆贤
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/07/22
Ceramic materials
Composite materials
Dielectric losses
Fused salts
Scanning electron microscopy
Solid state reactions
X ray diffraction
New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors
其他
2011-01-01
Wang, Runsheng
;
Yu, Tao
;
Huang, Ru
;
Ding, Wei
;
Wang, Yangyuan
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/11/13
DENSITY-GRADIENT MODEL
DESIGN OPTIMIZATION
NANOSCALE MOSFETS
CARRIER TRANSPORT
ION-IMPLANTATION
CMOS TECHNOLOGY
DRIFT-DIFFUSION
SIMULATION
PERFORMANCE
Predictive modeling of capacitance and resistance in gate-all-around cylindrical nanowire MOSFETs for parasitic design optimization
其他
2010-01-01
Xu, Qiumin
;
Zou, Jibin
;
Luo, Jieyin
;
Wang, Runsheng
;
Huang, Ru
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/13
A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs
其他
2009-01-01
He, Jin
;
Zhang, Lining
;
Zhang, Jian
;
Ma, Chenyue
;
Liu, Feilong
;
Chan, Mansun
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/10
non-classical MOS transistor
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
MOS-TRANSISTOR
CHARGE
PERFORMANCE
A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs
其他
2009-01-01
He, Jin
;
Zhang, Lining
;
Zheng, Rui
;
Zhang, Jian
;
Chan, Mansun
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/10
non-classical CMOS
surface potential
DG-MOSFETs
device physics
compact modelling
ULSI circuit simulation
DRAIN-CURRENT
DG MOSFETS
CHARGE
MODEL
EQUATION
NONEQUILIBRIUM
APPROXIMATION
TRANSISTORS
CAPACITANCE
VOLTAGE
Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects
其他
2009-01-01
Song, Yan
;
He, Jin
;
Zhang, Lining
;
Zhang, Jian
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
A Complete Surface Potential-Based Current-Voltage and Capacitance-Voltage Core Model for Undoped Surrounding-Gate MOSFETs
其他
2008-01-01
He, Jin
;
Song, Yan
;
Liu, Feng
;
Liu, Feilong
;
Zhang, Lining
;
Zhang, Jian
;
Zhang, Xing
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/12
non-classical MOSFET
surrounding-gate MOSFETs
device physics
surface potential model
non-charge-sheet approximation
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