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CORC

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Comparative Study on RTN Amplitude in Planar and FinFET Devices 其他
2017-01-01
Zhang, Zexuan; Zhang, Zhe; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Impacts of random telegraph noise (RTN) on the Energy-Delay tradeoffs of logic circuits 其他
2016-01-01
Zhang, Yang; Jiang, Xiaobo; Wang, Junyao; Guo, Shaofeng; Fang, Yichen; Wang, Runsheng; Luo, Mulong; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Predictive compact modeling of random variations in FinFET technology for 16/14nm node and beyond 其他
2016-01-01
Jiang, Xiaobo; Wang, Xingsheng; Wang, Runsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Metal oxide resistive random access memory based synaptic devices for brain-inspired computing 其他
2016-01-01
Gao, Bin; Kang, Jinfeng; Zhou, Zheng; Chen, Zhe; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Deep understanding of random telegraph noise (RTN) effects on SRAM stability 其他
2016-01-01
Mao, Dongyuan; Guo, Shaofeng; Wang, Runsheng; Luo, Mulong; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
IMPACTS OF RANDOM TELEGRAPH NOISE (RTN) ON THE ENERGY DELAY TRADEOFFS OF LOGIC CIRCUITS 其他
2016-01-01
Zhang, Yang; Jiang, Xiaobo; Wang, Junyao; Guo, Shaofeng; Fang, Yichen; Wang, Runsheng; Luo, Mulong; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
A Simple Method to Decompose the Amplitudes of Different Random Variation Sources in FinFET Technology 其他
2016-01-01
Jiang, Xiaobo; Wang, Runsheng; Huang, Ru; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen
收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03
Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries 其他
2016-01-01
Zhao, Y. D.; Huang, P.; Guo, Z. H.; Lun, Z. Y.; Gao, B.; Liu, X. Y.; Kang, J. F.
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Deep Understanding of Random Telegraph Noise (RTN) Effects on SRAM Stability 其他
2016-01-01
Mao, Dongyuan; Guo, Shaofeng; Wang, Runsheng; Luo, Mulong; Huang, Ru
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03
There is Plenty of Noise at the Bottom?——Understanding Random Telegraph Noise(RTN) in Nanoelectronics from Devices to Circuits 其他
2016-01-01
Runsheng Wang
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03

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