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	Comparative Study on RTN Amplitude in Planar and FinFET Devices
	Zhang, Zexuan ; Zhang, Zhe ; Guo, Shaofeng ; Wang, Runsheng ; Wang, Xingsheng ; Cheng, Binjie ; Asenov, Asen ; Huang, Ru
	2017
英文摘要	In this paper, the amplitude of random telegraph noise (RTN) in FinFET is studied, comparing with RTN in planar devices. The impacts of intrinsic characteristics in FinFET (channel non-uniformity and quantum confinement) on its RTN amplitude are comprehensively studied, based on the framework of "hole in the inversion layer" (HIL) model and the 3D device simulations. The results indicate that, the conventional HIL model for planar device can be extended to FinFET, if taking into account the non-uniform Fin current density. It is also found that, the RTN-induced "hole" in FinFET is smaller than that in planar device under the same inversion carrier density per gate, due to strong quantum confinement in FinFET. These results are helpful for accurate RTN amplitude modeling in FinFET.; NSFC [61522402, 61421005]; CPCI-S(ISTP); 109-110
语种	英语
出处	IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/469835]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Zexuan,Zhang, Zhe,Guo, Shaofeng,et al. Comparative Study on RTN Amplitude in Planar and FinFET Devices. 2017-01-01.

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