×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
西安交通大学 [5]
兰州大学 [4]
兰州理工大学 [3]
清华大学 [2]
大连化学物理研究所 [2]
山东大学 [2]
更多...
内容类型
会议论文 [28]
发表日期
2020 [1]
2018 [1]
2017 [1]
2016 [3]
2014 [5]
2013 [2]
更多...
学科主题
instrument... [2]
物理化学 [2]
electroche... [1]
materials ... [1]
光电子学 [1]
半导体材料 [1]
更多...
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共28条,第1-10条
帮助
限定条件
内容类型:会议论文
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
会议论文
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/12/18
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
TransmissionsAberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy
会议论文
作者:
Qu, Guanghao
;
Min, Daomin
;
Zhao, Zhonghua
;
Frechette, Michel
;
Li, Shengtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/11/19
electronic structure
radiation damage
dangling-bonds defects
SiO2/Si
first principle calculation
interface
oxygen vacancy
Design of solid frustrated Lewis pair catalysts by surface oxygen vacancy regulation for hydrogenation reactions
会议论文
作者:
Huang, Zheng-Qing
;
Chang, Chun-Ran
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/11/26
Study on the Origin of Giant Dielectric Constant of CaCu3Ti4O12 Ceramics
会议论文
作者:
Cheng, Peng-fei
;
Song, Jiang
;
Cao, Zhuang
;
Li, Sheng-tao
;
Li, Jian-ying
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/26
Oxygen vacancy
Dielectric properties
CaCu3Ti4O12
Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer
会议论文
4th International Conference on Machinery, Materials and Computing Technology (ICMMCT), JAN 23-24, 2016
作者:
Guan, Xiao-Jun
;
Ji, Xiang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/31
phase field simulation
silicon wafer
low temperature annealing
initial vacancy concentration
annealing temperature
oxygen clusters
Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer
会议论文
作者:
Xiao-Jun GUAN
;
Xiang JI
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/31
phase field simulation
silicon wafer
low temperature annealing
initial vacancy concentration
annealing temperature
oxygen clusters
The study of damage produced by H-ion and He-ion implantation in Lithium tantalate crystal
会议论文
作者:
IOP
;
Pang, L. L.
;
Wang, Z. G.
;
Yao, C. F.
;
Sun, J. R.
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2018/08/20
Determination of Oxygen Content in Perovskite-Type Cathode Coatings
会议论文
作者:
Li, Cheng-Xin
;
Gao, Min
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
oxygen vacancy
thermal spraying
SOFCs
cathode
perovskite oxide
Growth of β-Ga2O3 nanoparticles doped with Tin by Ni2+ catalyzed chemical vapor deposition
会议论文
Harbin, China, August 23, 2013 - August 26, 2013
作者:
Shi, Feng
;
Gu, Yu Fen
;
Li, Cui Xia
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2020/11/15
Chemical vapor deposition
Crystal structure
Fourier transform infrared spectroscopy
Functional materials
Gallium
Nanoparticles
Oxygen vacancies
Photoluminescence
Scanning electron microscopy
Tin
Vapors
X ray diffraction
Emission bands
Fourier transform infra reds
FT-IR spectrum
Gallium oxides
Growth mechanisms
Photoluminescence spectrum
Si(111) substrate
Sn-doping
©版权所有 ©2017 CSpace - Powered by
CSpace