| Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy | |
| Qu, Guanghao; Min, Daomin; Zhao, Zhonghua; Frechette, Michel; Li, Shengtao | |
| 2018 | |
| 关键词 | electronic structure radiation damage dangling-bonds defects SiO2/Si first principle calculation interface oxygen vacancy |
| 会议录 | 2018 IEEE 2ND INTERNATIONAL CONFERENCE ON DIELECTRICS (ICD)
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2829376 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Qu, Guanghao,Min, Daomin,Zhao, Zhonghua,et al. Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy[C]. 见:. |
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