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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Dynamics research on electron-stimulated desorption of fluorine from fluorinated graphene surface 会议论文 14th Annual Conference and the 3rd International Conference of the Chinese Society of Micro-Nano Technology, CSMNT 2012, Hangzhou, China, November 4, 2012 - November 7, 2012 作者:  Guo, Lei;  Chen, Xuekang;  Wang, Lanxi;  Cao, Shengzhu;  Bai, Xiaohang 收藏  |  浏览/下载：2/0  |  提交时间：2017/01/20 Graphene  Electron beams  Electrostatic devices  Electrostatic discharge  Fluorine  Nanotechnology  Photoelectrons  Surface chemistry  X ray photoelectron spectroscopy  Dynamical mechanisms  Electron stimulated desorption  ESD  Low current density   Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li, Z (Li, Z.); Li, CJ (Li, C. J.) 收藏  |  浏览/下载：304/15  |  提交时间：2010/03/29 DLTS   Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Yang, ZX 收藏  |  浏览/下载：202/19  |  提交时间：2010/03/29 indium phosphide   Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：61/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：220/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ 收藏  |  浏览/下载：177/52  |  提交时间：2010/03/29 DEEP-LEVEL DEFECTS  FE-DOPED INP  GROWN INP  SPECTROSCOPY  RESONANCE  WAFER   Annealing ambient controlled deep defect formation in InP 会议论文 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏  |  浏览/下载：20/1  |  提交时间：2010/10/29 FE-DOPED INP  SEMIINSULATING INP  POINT-DEFECTS  PRESSURE  WAFERS  TRAPS