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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Yan, FW; Gao, HY; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：136/0  |  提交时间：2010/03/09 GaN  MOCVD  LED  nano-pattern  SEM  HRXRD  PL   High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 GaN  nitrides  LED  MOCVD  patterned sapphire substrate  wet etching   Combined transparent electrodes for high power GaN-based LEDs with long life time 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Wang, LC; Yi, XY; Wang, XD; Wang, GH; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 LIGHT-EMITTING-DIODES  EFFICIENCY   A novel method for fabrication of integrated shadow mask for patterning electrode in passive matrix OLED displays (EI CONFERENCE) 会议论文 6th Electronics Packaging Technology Conference, EPTC 2004, December 8, 2005 - December 10, 2005, Singapore, Singapore Huang Z. H.; Su W. M.; Qi G. J.; Lu H. J.; Zeng X. T.; Wong S. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 This paper reports a novel method for making an integrated shadow mask used in fabrication of passive matrix OLED displays. Common positive and negative photoresists were employed to produce retrograded strip pillars with large overhang and undercut by photolithography. The pillar strips serve as an effective shadow mask for patterning the organic layers and the metal cathodes in OLED display devices. It is expected that this method can significantly enhance the performance of passive matrix OLED at a low shadow mask fabrication cost. The method can be used for fabricating more complicated structures for other display applications. 2004 IEEE.   MOCVD growth of cubic GaN: Materials and devices 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Zhao DG;  Zhang SM 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 MOCVD  GaN  InGaN  cubic  LED  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  PHASE EPITAXY  INGAN FILMS  ELECTROLUMINESCENCE  ZINCBLENDE  WURTZITE  MBE   High brightness AlGaInP orange light emitting diodes 会议论文 conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998 Li YZ; Wang GH; Ma XY; Peng HI; Wang ST; Chen LH 收藏  |  浏览/下载：11/0  |  提交时间：2010/10/29 high brightness  LED  MOCVD  AlGaInP   Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文 conference on display devices and systems ii, beijing, peoples r china, sep 16-17, 1998 Wang GH; Ma XY; Zhang YF; Peng HI; Wang ST; Li YZ; Chen LH 收藏  |  浏览/下载：15/0  |  提交时间：2010/10/29 LED  coupled distributed Bragg reflector  MOCVD  AlGaInP   MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文 2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997 Duan SK; Teng XG; Wang YT; Li GH; Jiang HX; Han P; Lu DC 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 GaN  MgAl2O4  MOVPE  LED  DIODES