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长春光学精密机械与物... [2]
半导体研究所 [1]
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会议论文 [3]
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2013 [2]
2001 [1]
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半导体材料 [1]
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Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique
会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.
;
Miao G.
;
Fu J.
;
Ban D.
;
Shen Z.
;
Lin H.
;
Zou X.
;
Peng H.
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浏览/下载:37/0
  |  
提交时间:2014/05/15
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE)
会议论文
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
Zhang T.
;
Miao G.
;
Fu J.
;
Ban D.
;
Shen Z.
;
Lin H.
;
Zou X.
;
Peng H.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn
TMGa
AsH3
and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power
their temperatures were detected by a thermocouple
and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm
In0.82Ga0.18As absorption layer with the thickness of 2.8 m
and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied
the curves of the I-V characteristics
the range of response spectrum
and the detectivity (D*) were obtained. (2013) Trans Tech Publications
Switzerland.
High-quality metamorphic HEMT grown on GaAs substrates by MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP
;
Cao X
;
Cui LJ
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
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浏览/下载:9/0
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提交时间:2010/11/15
molecular beam epitaxy
high electron mobility transistors
DENSITY
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