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Radiation Tolerant DC Characteristics of InAs/GaAs Quantum-Dot Diodes 会议论文
作者:  Mu, Yifei;  Lam, Sang;  Zhao, Cezhou;  Babazadeh, N.;  Hogg, Richard A.
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02
InAs/GaAs p-type quantum dot and dots-in-well infrared photodetectors 会议论文
osa topical conference:the 4th advances in optoelectronics and micro/nano-optics, xi’an, china, 2014-09
作者:  A. G. UnilPerera;  Y. F. Lao;  S. Wolde;  Y. H. Zhang;  T. M. Wang
收藏  |  浏览/下载：13/0  |  提交时间：2015/05/15
Desorption and Ripening of Low Density InAs Quantum Dots 会议论文
6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007
Zhan, F; Huang, SS; Niu, ZC; Ni, HQ; Xiong, YH; Fang, ZD; Zhou, HY; Luo, Y
收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09
Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers 会议论文
6th international conference on nanoscience and technology, beijing, peoples r china, jun 04-06, 2007
Wu, BP; Wu, DH; Xiong, YH; Huang, SS; Ni, HQ; Xu, YQ; Niu, ZC
收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09
Structure and properties of InAs/AlAs quantum dots for broadband emission 会议论文
作者:  Meng, X. Q.;  Jin, P.;  Liang, Z. M.;  Liu, F. Q.;  Wang, Z. G.
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05
Spin Relaxation in InAs Columnar Quantum Dots 会议论文
International Conference on Solid State Devices and Materials, Tsukuba, JAPAN, SEP 24-26, 2008
作者:  Lu S(陆书龙)
收藏  |  浏览/下载：8/0  |  提交时间：2010/01/15
Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:  Ma WQ;  Cao YL;  Yang T
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB
收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:  Xu B
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Xu B;  Jin P
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09
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