Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots
	Chen J ; Fan WJ ; Xu Q ; Zhang XW ; Li SS ; Xia JB
	2009
关键词	EMISSION
页码	105 (12): art. no. 123705 jun 15
通讯作者	chen, j, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore.
中文摘要	the electronic band structures and optical gains of inas1-xnx/gaas pyramid quantum dots (qds) are calculated using the ten-band k . p model and the valence force field method. the optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. with the variation of qd sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. it facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. for qd with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the fermi-dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. for larger qd, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller qd as carrier concentration increases. larger qd can reach its saturation gain faster, but this saturation gain is smaller than that of smaller qd. so the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate qd size according to the specific application requirement. (c) 2009 american institute of physics. [doi: 10.1063/1.3143025]
英文摘要	the electronic band structures and optical gains of inas1-xnx/gaas pyramid quantum dots (qds) are calculated using the ten-band k . p model and the valence force field method. the optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. with the variation of qd sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. it facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. for qd with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the fermi-dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. for larger qd, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller qd as carrier concentration increases. larger qd can reach its saturation gain faster, but this saturation gain is smaller than that of smaller qd. so the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate qd size according to the specific application requirement. (c) 2009 american institute of physics. [doi: 10.1063/1.3143025]; zhangdi于2010-03-09批量导入; zhangdi于2010-03-09批量导入; [chen, j.; fan, w. j.; xu, q.; zhang, x. w.] nanyang technol univ, sch elect & elect engn, singapore 639798, singapore; [li, s. s.; xia, j. b.] chinese acad sci, inst semicond, beijing 10083, peoples r china
收录类别	其他
会议录	journal of applied physics
会议录出版者	amer inst physics ; circulation & fulfillment div, 2 huntington quadrangle, ste 1 n o 1, melville, ny 11747-4501 usa
会议录出版地	circulation & fulfillment div, 2 huntington quadrangle, ste 1 n o 1, melville, ny 11747-4501 usa
学科主题	半导体物理
语种	英语
ISSN号	0021-8979
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8252]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen J,Fan WJ,Xu Q,et al. Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots[C]. 见:.