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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electronic structure and optical property of semiconductor nanocrystallites 会议论文 international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003 Xia JB; Chang K; Li SS 收藏  |  浏览/下载：36/0  |  提交时间：2010/11/15 semiconductor cluster  self-assembled quantum dot  diluted magnetic semiconductor  electronic structure  resonant tunneling  QUANTUM DOTS  EXCITON-STATES  SPHERES   Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文 26th international symposium on compound semiconducors, berlin, germany, aug 22-26, 1999 Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 ELECTRONIC-STRUCTURE  CARRIER RELAXATION  ENERGY-LEVELS  SPECTROSCOPY   Electronic characteristics of InAs self-assembled quantum dots 会议论文 9th international conference on modulated semiconductor structures (mss9), fukuoka, japan, jul 12-16, 1999 Wang HL; Feng SL; Zhu HJ; Ning D; Chen F 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 InAs/GaAs quantum dots  self-assembled structure  DLTS  PL  band offset  ENERGY-LEVELS  CARRIER RELAXATION  SPECTROSCOPY   Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells 会议论文 40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998 作者:  Zhang JY;  Jiang DS 收藏  |  浏览/下载：21/0  |  提交时间：2010/11/15 double multi-quantum wells  photocurrent spectra  ZnCdSe-ZnSe  SPECTROSCOPY  PHOTOLUMINESCENCE  HETEROSTRUCTURES  PHOTODETECTORS   Defect production in silicon irradiated with 750 MeV Ar ions 会议论文 作者:  Zhu, ZY;  Hou, MD;  Jin, YF;  Liu, CL;  Wang, YS 收藏  |  浏览/下载：8/0  |  提交时间：2018/08/20 irradiation  defect  silicon   Defect production in silicon irradiated with 750 MeV Ar ions 会议论文 作者:  Zhu, ZY;  Hou, MD;  Jin, YF;  Liu, CL;  Wang, YS 收藏  |  浏览/下载：7/0  |  提交时间：2018/08/20 irradiation  defect  silicon