Defect production in silicon irradiated with 750 MeV Ar ions

	Defect production in silicon irradiated with 750 MeV Ar ions
	Zhu, ZY; Hou, MD; Jin, YF; Liu, CL; Wang, YS; Han, J
	1998-02
关键词	irradiation defect silicon
卷号	135
期号	1-4
页码	260-264
英文摘要	Specimens of about 320 mu m thick and (1 1 1) oriented single crystalline silicon are irradiated with 750 MeV argon ions at room temperature to dose levels of 9 x 10(13) and 4.3 x 10(14) Ar/cm(2). Positron lifetime measurements, fourier transform infrared absorption (FT-IR) and electron paramagnetic resonance (EPR) techniques are applied to investigate the specimens. It is found that divacancies of neutral charge state are the main vacancy clusters induced by the irradiations. No amorphous phase is detected up to the highest dose. In the area where electronic processes are dominating a divacancy concentration around 7 x 10(16)/cm(3) is found which shows little change with dose. At the projected range where nuclear process is dominating the divacancy concentration increases dramatically with increasing of dose. It is argued that energy deposition through electronic processes can only induce limited damage in silicon and high electronic stopping power suppresses the formation of amorphous zones. (C) 1998 Elsevier Science B.V.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000074395300047
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/57927]
专题	中国科学院近代物理研究所
通讯作者	Zhu, ZY
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhu, ZY,Hou, MD,Jin, YF,et al. Defect production in silicon irradiated with 750 MeV Ar ions[C]. 见:.