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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏  |  浏览/下载：221/68  |  提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP  SEMICONDUCTOR COMPOUND-CRYSTALS  STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  DEEP-LEVEL DEFECTS  ANNEALING AMBIENT  POINT-DEFECTS  FE  PHOSPHIDE  DONORS   Annealing ambient controlled deep defect formation in InP 会议论文 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏  |  浏览/下载：23/1  |  提交时间：2010/10/29 FE-DOPED INP  SEMIINSULATING INP  POINT-DEFECTS  PRESSURE  WAFERS  TRAPS   Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy 会议论文 international conference on advanced materials: sympopsium m - silicon-based materials and devices, beijing, peoples r china, jun 13-18, 1999 作者:  Yu F 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 solid phase epitaxy  silicon on sapphire (SOS)  carrier mobility   Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001) 会议论文 14th latin american symposiumm on solid state physics, oaxaca, mexico, jan 11-16, 1998 Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG 收藏  |  浏览/下载：4/0  |  提交时间：2010/11/15 ELECTRICAL-PROPERTIES  ION-IMPLANTATION  REGROWTH  SILICON  LAYERS   The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文 10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997 Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15 GROWTH  INTERDIFFUSION  ISLANDS  SCALE