Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)
	Zou LF ; Acosta-Ortiz SE ; Zou LX ; Regalado LE ; Sun DZ ; Wang ZG
	1998
会议名称	14th latin american symposiumm on solid state physics
会议日期	jan 11-16, 1998
会议地点	oaxaca, mexico
关键词	ELECTRICAL-PROPERTIES ION-IMPLANTATION REGROWTH SILICON LAYERS
页码	85-88
通讯作者	zou lf ctr invest opt ac unidad aguascalientes juan montoro 207zona ctr aguascalientes 20000 ags mexico.
中文摘要	the annealing behavior of si implanted with ge and then bf2 has been characterized by double crystal x-ray diffraction (dcxrd) and secondary ion mass spectroscopy (sims). the results show that annealing at 600 degrees c for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of ge and b atoms has occurred during the annealing. the initial crystallinity of si is fully recovered after annealing at 950 degrees c for 60 minutes and accompanied by ge diffusion. very shallow boron junction depth has been formed. when annealing temperature rises to 1050 degrees c, b diffusion enhances, which leads to a deep diffusion and good distribution of b atoms into the si substrate. the x-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees c for 60 minutes display two sige peaks, which may be related to the b concentration profiles.
收录类别	CPCI-S
会议录	revista mexicana de fisica, 44
会议录出版者	sociedad mexicana de fisica ; apartado postal 70-348, coyoacan 04511, mexico
会议录出版地	apartado postal 70-348, coyoacan 04511, mexico
学科主题	半导体物理
语种	英语
ISSN号	0035-001x
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15055]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zou LF,Acosta-Ortiz SE,Zou LX,et al. Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)[C]. 见:14th latin american symposiumm on solid state physics. oaxaca, mexico. jan 11-16, 1998.