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Structural improvement of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) 会议论文
Asia Pacific Conference on Optics Manufacture 2012, APCOM 2012, August 26, 2012 - August 28, 2012, Changchun, China
作者:  Qin L.
收藏  |  浏览/下载：10/0  |  提交时间：2014/05/15
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.; Wang L.; Ning Y.; Liu Y.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.  
Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) 会议论文
2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China
Liang X.; Wang L.; Ning Y.; Liu Y.
收藏  |  浏览/下载：13/0  |  提交时间：2014/05/15
Optimization of 980nm high-power vertical-cavity surface-emitting laser array 会议论文
作者:  Zhang X(张星)
收藏  |  浏览/下载：13/0  |  提交时间：2012/05/12
Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Yan C.; He C.; Lu G.; Qin L.
收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25
High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
Changling Y.; Guoguang L.; Chunfeng H.; Li Q.
收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25
High power diode pumped Vertical External-cavity Surface-emitting Lasers (VECSELS) (EI CONFERENCE) 会议论文
IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18, 2006 - September 22, 2006, Shanghai, China
Lu G. G.; He C. F.; Shan X. N.; Qin L.; Yan C. L.; Ning Y. Q.; Wang L. J.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
Theoretical results of vertical external cavity surface emitting laser (VECSEL) (EI CONFERENCE) 会议论文
IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, Sep 18 - 22 2006, Shanghai, China
Chun F. H.; Lu G. G.; Shan X. N.; Qin L.; Yan C. L.; Ning Y. Q.; Wang L. J.
收藏  |  浏览/下载：10/0  |  提交时间：2013/03/25
Theoretical results of vertical external cavity surface emitting laser (VECSEL) 会议论文
2006
He C. F.; Lu G. G.; Shan X. N.; Qin L.; Yan C. L.; Ning Y. Q.; Wang L. J.
收藏  |  浏览/下载：14/0  |  提交时间：2013/03/28
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
Li T.; Yongqiang N.; Yanfang S.; Zhenhua J.; Liu Y.; Wang L.-J.
收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.  

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