Structural improvement of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL)

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	Structural improvement of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL)
	Qin L.
	2013
会议名称	Asia Pacific Conference on Optics Manufacture 2012, APCOM 2012, August 26, 2012 - August 28, 2012
会议地点	Changchun, China
页码	373-376
英文摘要	920 nm OPS-VECSEL has an important application in laser display. We constructed and optimized a 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device, especially the mode, the threshold and the optical-optical translation efficiency, were analyzed by dealing with different numbers of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose the best structure of them. On this basis, we optimized the external cavity mirrors reflectivity and the simulation showed that the performances would be significantly increased. (2013) Trans Tech Publications, Switzerland.
收录类别	EI
会议录	Asia Pacific Conference on Optics Manufacture 2012, APCOM 2012, August 26, 2012 - August 28, 2012
会议录出版者	Trans Tech Publications Ltd
会议录出版地	Changchun, China
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/41002]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Qin L.. Structural improvement of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL)[C]. 见:Asia Pacific Conference on Optics Manufacture 2012, APCOM 2012, August 26, 2012 - August 28, 2012. Changchun, China.