CORC

浏览/检索结果: 共12条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Dual unit coupled cycle film crystallization method comprises e.g. preparing the solution to be crystallized, and according to the solubility of the solvent preparing uniform solution of near saturation point solute. 专利
申请日期: 2018-01-01, 公开日期: 2018-04-10
作者:  JIANG X TUO L HE G XIAO W LI X WU X
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/02
New large conjugated molecule fluorene derivative for solving reduced solubility caused by high rigidity structure of molecule, and improving dissolving process of molecular material useful for organic nonlinear optical material. 专利
申请日期: 2008-01-01, 公开日期: 2008-11-12
作者:  XIAO Y ZHANG D LI X
收藏  |  浏览/下载:1/0  |  提交时间:2019/12/27
Method for producing inorganic semiconductor nanocrystalline rods and their use 专利
专利号: US6788453, 申请日期: 2004-09-07, 公开日期: 2004-09-07
作者:  BANIN, URI;  KAN, SHI HAI
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/26
Method for producing inorganic semiconductor nanocrystalline rods and their use 专利
专利号: CA2485945A1, 申请日期: 2003-11-27, 公开日期: 2003-11-27
作者:  BANIN, URI;  KAN, SHI HAI
收藏  |  浏览/下载:0/0  |  提交时间:2020/01/18
Means of controlling dopant diffusion in a semiconductor heterostructure 专利
专利号: US20030112841A1, 申请日期: 2003-06-19, 公开日期: 2003-06-19
作者:  MASSA, JOHN;  RYDER, PAUL;  BERRY, GRAHAM
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/31
Method of epitaxial growth of (IV)x(iii-v)(1-x) alloy and method of converting group iii-v semiconductor structure into irregular alloy and hetero structure and semiconductor device constituted by the same 专利
专利号: JP1989001227A, 申请日期: 1989-01-05, 公开日期: 1989-01-05
作者:  ROBAATO DEII BAANAMU
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/31
- 专利
专利号: JP1986050373B2, 申请日期: 1986-11-04, 公开日期: 1986-11-04
作者:  HIRANO RYOICHI
收藏  |  浏览/下载:4/0  |  提交时间:2020/01/18
Manufacture of semiconductor laser device 专利
专利号: JP1986239691A, 申请日期: 1986-10-24, 公开日期: 1986-10-24
作者:  DOI KONEN;  AIKI KUNIO;  FUNAKOSHI KIYOHIKO;  KAYANE NAOKI;  TAKEDA YUTAKA
收藏  |  浏览/下载:0/0  |  提交时间:2020/01/18
Manufacture of semiconductor device 专利
专利号: JP1986004226A, 申请日期: 1986-01-10, 公开日期: 1986-01-10
作者:  ISOZUMI SHIYOUJI
收藏  |  浏览/下载:8/0  |  提交时间:2020/01/13
Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergang 专利
专利号: FR2002649A1, 申请日期: 1969-10-31, 公开日期: 1969-10-31
作者:  -
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/30


©版权所有 ©2017 CSpace - Powered by CSpace