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| Dual unit coupled cycle film crystallization method comprises e.g. preparing the solution to be crystallized, and according to the solubility of the solvent preparing uniform solution of near saturation point solute. 专利 申请日期: 2018-01-01, 公开日期: 2018-04-10 作者: JIANG X TUO L HE G XIAO W LI X WU X
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| New large conjugated molecule fluorene derivative for solving reduced solubility caused by high rigidity structure of molecule, and improving dissolving process of molecular material useful for organic nonlinear optical material. 专利 申请日期: 2008-01-01, 公开日期: 2008-11-12 作者: XIAO Y ZHANG D LI X
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| Method for producing inorganic semiconductor nanocrystalline rods and their use 专利 专利号: US6788453, 申请日期: 2004-09-07, 公开日期: 2004-09-07 作者: BANIN, URI; KAN, SHI HAI
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| Method for producing inorganic semiconductor nanocrystalline rods and their use 专利 专利号: CA2485945A1, 申请日期: 2003-11-27, 公开日期: 2003-11-27 作者: BANIN, URI; KAN, SHI HAI
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| Means of controlling dopant diffusion in a semiconductor heterostructure 专利 专利号: US20030112841A1, 申请日期: 2003-06-19, 公开日期: 2003-06-19 作者: MASSA, JOHN; RYDER, PAUL; BERRY, GRAHAM
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| Method of epitaxial growth of (IV)x(iii-v)(1-x) alloy and method of converting group iii-v semiconductor structure into irregular alloy and hetero structure and semiconductor device constituted by the same 专利 专利号: JP1989001227A, 申请日期: 1989-01-05, 公开日期: 1989-01-05 作者: ROBAATO DEII BAANAMU
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| - 专利 专利号: JP1986050373B2, 申请日期: 1986-11-04, 公开日期: 1986-11-04 作者: HIRANO RYOICHI
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| Manufacture of semiconductor laser device 专利 专利号: JP1986239691A, 申请日期: 1986-10-24, 公开日期: 1986-10-24 作者: DOI KONEN; AIKI KUNIO; FUNAKOSHI KIYOHIKO; KAYANE NAOKI; TAKEDA YUTAKA
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| Manufacture of semiconductor device 专利 专利号: JP1986004226A, 申请日期: 1986-01-10, 公开日期: 1986-01-10 作者: ISOZUMI SHIYOUJI
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:8/0  |  提交时间:2020/01/13 |
| Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergang 专利 专利号: FR2002649A1, 申请日期: 1969-10-31, 公开日期: 1969-10-31 作者: -
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:10/0  |  提交时间:2019/12/30 |