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	Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergang
	-
	1969-10-31
著作权人	RADIO CORPORATION AMERIC
专利号	FR2002649A1
国家	法国
文献子类	发明申请
其他题名	Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergang
英文摘要	1,228,717. Electroluminescence. R.C.A. CORPORATION. 25 Feb., 1969 [26 Feb., 1969], No. 9945/69. Heading C4S. [Also in Division H1] A laser diode is formed on a R+ substrate (which forms part of the electrode) by epitaxially depositing a monocrystalline layer of P-type gallium arsenide from a zinc-doped molten solution of gallium arsenide in gallium, and by then epitaxially forming on this layer an N-type layer from a tellurium-doped molten solution of gallium arsenide in gallium. The solubility of zinc in the solution increases with temperature so that the first deposited material is more heavily doped and may contain inclusions of zinc-these do not matter at the junction with the heavily doped substrate. The solubility of tellurium in the solution decreases with increasing temperature so that doping in the tellurium layer is highest near the free surface-a tin electrode layer is provided on this. The structure may be annealed to diffuse zinc from the N-type layer into the P-type layer, thus shifting the PN junction from the mechanical interface of the layers. The Specification also contains the subject matter of Specification 1,172,32
公开日期	1969-10-31
申请日期	1969-02-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/56483]
专题	半导体激光器专利数据库
作者单位	RADIO CORPORATION AMERIC
推荐引用方式 GB/T 7714	-. Verfahren zur Herstellung eines Halbleiterbauelements mit pn-UEbergang. FR2002649A1. 1969-10-31.

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