CORC

浏览/检索结果: 共465条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same 专利
专利号: US10135226, 申请日期: 2018-11-20, 公开日期: 2018-11-20
作者:  CHENG, CHENG-WEI;  LEOBANDUNG, EFFENDI;  LI, NING;  SADANA, DEVENDRA K.;  SHIU, KUEN-TING
收藏  |  浏览/下载:14/0  |  提交时间:2019/12/24
Semiconductor Structure with Stress-Reducing Buffer Structure 专利
专利号: US20170110628A1, 申请日期: 2017-04-20, 公开日期: 2017-04-20
作者:  SHATALOV, MAXIM S.;  YANG, JINWEI;  DOBRINSKY, ALEXANDER;  SHUR, MICHAEL;  GASKA, REMIGIJUS
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/30
LED on silicon substrate using zinc-sulfide as buffer layer 专利
专利号: US9159869, 申请日期: 2015-10-13, 公开日期: 2015-10-13
作者:  CHEN, ZHEN
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/24
Vertical gallium-nitride-based LED chip has buffer layer, un-doped aluminum-gallium-indium nitride layer, doped aluminum-gallium-indium nitride layers, multiquantum well layer, indium-tin oxide layer, and nickel/gold electrode. 专利
申请日期: 2012-01-01, 公开日期: 2012-10-17
作者:  LIN G LIU Q QIN F
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/18
Monolithic power monitor and wavelength detector 专利
专利号: US8078063, 申请日期: 2011-12-13, 公开日期: 2011-12-13
作者:  DAGHIGHIAN, HENRY M.;  MCCALLION, KEVIN J.
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/26
Semiconductor light emitting device 专利
专利号: US8023545, 申请日期: 2011-09-20, 公开日期: 2011-09-20
作者:  ASANO, HIDEKI
收藏  |  浏览/下载:1/0  |  提交时间:2020/01/18
Two-wavelength semiconductor laser device and method for fabricating the same 专利
专利号: US7613220, 申请日期: 2009-11-03, 公开日期: 2009-11-03
作者:  TAKAYAMA, TORU;  SATOH, TOMOYA;  KIDOGUCHI, ISAO
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/26
Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers 专利
专利号: US7598108, 申请日期: 2009-10-06, 公开日期: 2009-10-06
作者:  LI, TINGKAI;  TWEET, DOUGLAS J.;  MAA, JER-SHEN;  HSU, SHENG TENG
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/24
Epitaxial wafers, method for manufacturing of epitaxial wafers, method of suppressing bowing of these epitaxial wafers and semiconductor multilayer structures using these epitaxial wafers 专利
专利号: US7479658, 申请日期: 2009-01-20, 公开日期: 2009-01-20
作者:  SAKAI, MASAHIRO;  TANAKA, MITSUHIRO;  EGAWA, TAKASHI
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/24
Ingan-based light-emitting diode chip and a method for the production thereof 专利
专利号: US7375377, 申请日期: 2008-05-20, 公开日期: 2008-05-20
作者:  BAUR, JOHANNES;  BRUDERL, GEORG;  HAHN, BERTHOLD;  HARLE, VOLKER;  STRAUSS, UWE
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/24


©版权所有 ©2017 CSpace - Powered by CSpace