Semiconductor Structure with Stress-Reducing Buffer Structure | |
SHATALOV, MAXIM S.; YANG, JINWEI; DOBRINSKY, ALEXANDER; SHUR, MICHAEL; GASKA, REMIGIJUS | |
2017-04-20 | |
著作权人 | SENSOR ELECTRONIC TECHNOLOGY, INC. |
专利号 | US20170110628A1 |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor Structure with Stress-Reducing Buffer Structure |
英文摘要 | A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled. |
公开日期 | 2017-04-20 |
申请日期 | 2016-12-28 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/54753] |
专题 | 半导体激光器专利数据库 |
作者单位 | SENSOR ELECTRONIC TECHNOLOGY, INC. |
推荐引用方式 GB/T 7714 | SHATALOV, MAXIM S.,YANG, JINWEI,DOBRINSKY, ALEXANDER,et al. Semiconductor Structure with Stress-Reducing Buffer Structure. US20170110628A1. 2017-04-20. |
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