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P-type zinc-oxide and n-type gallium nitride combined zinc-oxide radical vertical cavity surface emitting laser, has limiting layer formed on luminescent layer, where band width of limiting layer is greater than that of light-emitting layer. 专利
申请日期: 2011-01-01, 公开日期: 2011-11-30
作者:  DU G LIANG H XIA X ZHAO W
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