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	P-type zinc-oxide and n-type gallium nitride combined zinc-oxide radical vertical cavity surface emitting laser, has limiting layer formed on luminescent layer, where band width of limiting layer is greater than that of light-emitting layer.
	DU G LIANG H XIA X ZHAO W
	2011
公开日期	2011-11-30
URL标识	查看原文
申请日期	2010-05-25
内容类型	专利
URI标识	http://www.corc.org.cn/handle/1471x/4853273
专题	大连理工大学
作者单位	UNIV DALIAN TECHNOLOGY (UYDA-C
推荐引用方式 GB/T 7714	DU G LIANG H XIA X ZHAO W. P-type zinc-oxide and n-type gallium nitride combined zinc-oxide radical vertical cavity surface emitting laser, has limiting layer formed on luminescent layer, where band width of limiting layer is greater than that of light-emitting layer.. 2011-01-01.

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