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Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 4, 页码: 792-797
Zhang, EX; Qian, C; Zhang, ZX; Lin, CL; Wang, X
收藏  |  浏览/下载:13/0  |  提交时间:2012/03/24
Computer simulation for the formation of the insulator layer of silicon-on-insulator devices by N+ and O+ co-implantation 期刊论文
CHINESE PHYSICS LETTERS, 2002, 卷号: 19, 期号: 12, 页码: 1782-1784
Lin, Q; Zhu, M; Liu, XH; Xie, XY; Lin, CL
收藏  |  浏览/下载:10/0  |  提交时间:2012/03/24
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