Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

	Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation
	Zhang, EX ; Qian, C ; Zhang, ZX ; Lin, CL ; Wang, X
刊名	CHINESE PHYSICS
	2006
卷号	15 期号:4 页码:792-797
关键词	IMPLANTING NITROGEN RADIATION RESPONSE THERMAL OXIDES SIMOX CHARGE ELECTRON OXYGEN HOLE TRANSISTORS TECHNOLOGY
ISSN号	1009-1963
通讯作者	Zhang, EX, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95200]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Zhang, EX,Qian, C,Zhang, ZX,et al. Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation[J]. CHINESE PHYSICS,2006,15(4):792-797.
APA	Zhang, EX,Qian, C,Zhang, ZX,Lin, CL,&Wang, X.(2006).Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation.CHINESE PHYSICS,15(4),792-797.
MLA	Zhang, EX,et al."Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation".CHINESE PHYSICS 15.4(2006):792-797.