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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：微电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 5, 页码: article no.56104 作者:  Yu F 收藏  |  浏览/下载：96/6  |  提交时间：2011/07/06 separation by oxygen implantation  buried oxide  nitrogen implantation  positive charge density  RADIATION HARDNESS  IMPLANTING NITROGEN  ION-IMPLANTATION  IMPROVEMENT  TECHNOLOGY  OXYGEN  LAYER   Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers 期刊论文 journal of semiconductors, 2010, 卷号: 31, 期号: 2, 页码: 99-102 Zheng Zhongshan; Liu Zhongli; Li Ning; Li Guohua; Zhang Enxia 收藏  |  浏览/下载：18/0  |  提交时间：2011/08/16 Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106106 Tang HM (Tang Hai-Ma); Zheng ZS (Zheng Zhong-Shan); Zhang EX (Zhang En-Xia); Yu F (Yu Fang); Li N (Li Ning); Wang NJ (Wang Ning-Juan) 收藏  |  浏览/下载：51/0  |  提交时间：2010/11/02 silicon-on-insulator wafers  radiation hardness  nitrogen implantation   Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density 期刊论文 acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451 Zheng, ZS (Zheng Zhong-Shan); Zhang, EX (Zhang En-Xia); Liu, ZL (Liu Zhong-Li); Zhang, ZX (Zhang Zheng-Xuan); Li, N (Li Ning); Li, GH (Li Guo-Hua) 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29 SIMOX   Fabrication of nanoscale metallic air-bridges by introducing a SiO2 sacrificial layer 期刊论文 materials science in semiconductor processing, 2007, 卷号: 10, 期号: 39908, 页码: 194-199 Zhang, Y; Liu, J; Li, Y; Yang, FH 收藏  |  浏览/下载：65/2  |  提交时间：2010/03/08 nanoscale metallic air-bridge  sacrificial layer  electron-beam lithography   Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET 期刊论文 功能材料与器件学报, 2007, 卷号: 13, 期号: 5, 页码: 426-430 作者:  YU Fang 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23 Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文 acta physica sinica, 2005, 卷号: 54, 期号: 1, 页码: 348-353 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/17 SOI   Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 481-484 Zheng ZS; Liu ZL; Zhang GQ; Li N; Li GH; Ma HZ; Zhang EX; Zhang ZX; Wang X 收藏  |  浏览/下载：33/5  |  提交时间：2010/03/17 OXIDES   Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文 journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56 Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL 收藏  |  浏览/下载：194/29  |  提交时间：2010/03/17 silicon-on-insulator (SOI)   具有复合埋层的新型SIMON材料的制备 期刊论文 半导体学报, 2004, 卷号: 25, 期号: 7, 页码: 814-818 易万兵; 陈猛; 张恩霞; 刘相华; 陈静; 董业民; 金波; 刘忠立; 王曦 收藏  |  浏览/下载：8/0  |  提交时间：2010/11/23