Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET

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	Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET
	YU Fang
刊名	功能材料与器件学报
	2007
卷号	13 期号:5 页码:426-430
中文摘要	radiation hardness of simox(separation by implanted oxygen)/nmosfet by implanting n and f ion has been carefully studied in this paper.both n and f ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.moreover,experimental data show that the higher dose of the n and f ion implantation is,the better radiation hardness is achieved.in order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of n or f implantation that have smaller impact on the preradiation device performance.
英文摘要	radiation hardness of simox(separation by implanted oxygen)/nmosfet by implanting n and f ion has been carefully studied in this paper.both n and f ion implantation can reduce hole traps in the buried oxide and the interfacial regions,which consequently improves the radiation hardness,especially under high dose radiation conditions.moreover,experimental data show that the higher dose of the n and f ion implantation is,the better radiation hardness is achieved.in order to minimize the influence on the threshold voltage of devices,it is important to choose suitable implantation dose and energy of n or f implantation that have smaller impact on the preradiation device performance.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:01:26导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:01:26z (gmt). no. of bitstreams: 1 3993.pdf: 289667 bytes, checksum: dbee77d7bdcfff8050be07546d0f2e8e (md5) previous issue date: 2007; institute of semicongductors,cas
学科主题	微电子学
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16201]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	YU Fang. Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET[J]. 功能材料与器件学报,2007,13(5):426-430.
APA	YU Fang.(2007).Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET.功能材料与器件学报,13(5),426-430.
MLA	YU Fang."Radiation hardness characteristic of N-implanted and F-implanted SIMOX/NMOSFET".功能材料与器件学报 13.5(2007):426-430.