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Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文
physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850
Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J
收藏  |  浏览/下载：98/5  |  提交时间：2011/07/05
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：37/2  |  提交时间：2011/07/05
Structural and optical properties of ZnO thin films on glass substrate grown by laser-ablating Zn target in oxygen atmosphere 期刊论文
physica b-condensed matter, 2007, 卷号: 396, 期号: 1-2, 页码: 95-101
Zhu BL; Zhao XZ; Su FH; Li GH; Wu XG; Wu J; Wu R; Liu J
收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29
ZnO  
Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 117-120
Gao HY (Gao Haiyong)
收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11
Defects in GaN films grown on Si(111) substrates by metal-organic chemical vapour deposition 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 10, 页码: 1811-1814
Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL
收藏  |  浏览/下载：251/3  |  提交时间：2010/08/12
Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots 期刊论文
journal of applied physics, 2003, 卷号: 93, 期号: 11, 页码: 8898-8902
作者:  Xu B
收藏  |  浏览/下载：263/9  |  提交时间：2010/08/12
Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance 期刊论文
journal of applied physics, 2003, 卷号: 93, 期号: 7, 页码: 4169-4172
作者:  Li CM;  Jin P;  Xu B
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Modulation spectroscopy of GaAs covered by InAs quantum dots 期刊论文
chinese physics letters, 2002, 卷号: 19, 期号: 7, 页码: 1010-1012
作者:  Xu B;  Jin P;  Li CM
收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF; Cao YG; Xie MH; Wang XL; Tong SY
收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
作者:  Zhao DG
收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12

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