Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots | |
Xu B | |
刊名 | journal of applied physics |
2003 | |
卷号 | 93期号:11页码:8898-8902 |
关键词 | SCANNING-TUNNELING-MICROSCOPY GROWTH ISLANDS NM |
ISSN号 | 0021-8979 |
通讯作者 | he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
中文摘要 | the structure and optical properties of in(ga)as with the introduction of ingaalas or inalas seed dot layers are investigated. the area density and size homogeneity of the upper ingaas dots are efficiently improved by the introduction of a buried layer of high-density dots. our explanation for the realization of high density and size homogeneity dots is presented. when the gaas spacer layer is too thin to cover the seed dots, the upper dots exhibit some optical properties like those of a quantum well. by analyzing the growth dynamics, we refer to this kind of dot as an empty-core dot. (c) 2003 american institute of physics. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/11556] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu B. Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots[J]. journal of applied physics,2003,93(11):8898-8902. |
APA | Xu B.(2003).Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots.journal of applied physics,93(11),8898-8902. |
MLA | Xu B."Effects of seed dot layer and thin GaAs spacer layer on the structure and optical properties of upper In(Ga)As quantum dots".journal of applied physics 93.11(2003):8898-8902. |
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