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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 2, 页码: art. no. 026102 作者:  Jiang DS;  Zhang SM;  Yang H;  Yang H;  Wang YT 收藏  |  浏览/下载：59/0  |  提交时间：2010/03/08 LIGHT-EMITTING-DIODES  FUNDAMENTAL-BAND GAP  NANOWIRES  HETEROSTRUCTURES  NANOSTRUCTURES  MOCVD  POLAR   Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition 期刊论文 japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1 Zhong, L; Ma, XY 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/08 tensile strain  GaAsP/GaInP  photoluminescence  quantum well  laser diodes  LP-MOCVD   InN nanoflowers grown by metal organic chemical vapor deposition 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 7, 页码: art.no.071113 Kang TT (Kang Ting-Ting); Liu X (Liu Xianglin); Zhang RQ (Zhang Ri Q.); Hu WG (Hu Wei G.); Cong G (Cong Guangwei); Zhao FA (Zhao Feng-Ai); Zhu Q (Zhu Qinsheng) 收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11 CRYSTAL-GROWTH  NITRIDE  NANOWIRES   High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition 期刊论文 ieee journal of quantum electronics, 1999, 卷号: 35, 期号: 10, 页码: 1535-1541 Yang GW; Hwu RJ; Xu ZT; Ma XY 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 quantum-well lasers  semiconductor diodes  semiconductor epitaxial layers  semiconductor lasers  semiconductor materials  NM DIODE-LASERS  WAVE-GUIDE  AMPLIFIER  FRONT-FACET POWER   High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 InGaAsP  strained layer quantum well  laser diode  MOCVD   The study of single mode 650nm AlGaInP quantum well laser diodes for DVD 会议论文 semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998 Ma XY; Cao Q; Wang ST; Guo L; Wang LM; Yang YL; Zhang HQ; Zhang XY; Chen LH 收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29 AlGaInP  quantum well  laser diode  MOCVD  DVD