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Single photon emission from deep-level defects in monolayer WSe2 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 24, 页码: 245313(5)
作者:  Yanxia Ye;  Xiuming Dou;  * Kun Ding;  Yu Chen;  Desheng Jiang
收藏  |  浏览/下载:16/0  |  提交时间:2018/06/15
Donor-donor binding in In2O3: Engineering shallow donor levels 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming); Wang LL (Wang Ling-Ling); Wang D (Wang Dan); Liu JZ (Liu Jian-Zhe); Chen KQ (Chen Ke-Qiu)
收藏  |  浏览/下载:71/0  |  提交时间:2010/05/24
Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 15, 页码: art. no. 155403
作者:  Li JB;  Hou QF
收藏  |  浏览/下载:67/11  |  提交时间:2010/03/08
Influence of deep level defects on electrical compensation in semi-insulating InP materials 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 1167-1171
Yang, J (Yang Jun); Zhao, YW (Zhao You-Wen); Dong, ZY (Dong Zhi-Yuan); Deng, AH (Deng Ai-Hong); Miao, SS (Miao Shan-Shan); Wang, B (Wang Bo)
收藏  |  浏览/下载:32/0  |  提交时间:2010/03/29
InP  
Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property 期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5536-5541
Zhao, YW (Zhao You-Wen); Miao, SS (Miao Shan-Shan); Dong, ZY (Dong Zhi-Yuan); Lue, XH (Lue Xiao-Hong); Deng, AH (Deng Ai-Hong); Yang, J (Yang Jun); Wang, B (Wang Bo)
收藏  |  浏览/下载:37/0  |  提交时间:2010/03/29
Deep level transient spectroscopy studies of Er and Pr implanted GaN films 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1407-1412
Song SF; Chen WD; Xu ZJ; Xu XR
收藏  |  浏览/下载:46/0  |  提交时间:2010/04/11
Mutual passivation of donors and isovalent nitrogen in GaAs 期刊论文
physical review letters, 2006, 卷号: 96, 期号: 3, 页码: art.no.035505
Li J; Carrier P; Wei SH; Li SS; Xia JB
收藏  |  浏览/下载:72/0  |  提交时间:2010/04/11
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW; Dong, ZY
收藏  |  浏览/下载:221/68  |  提交时间:2010/03/29
Fe-diffusion-induced defects in InP annealed in iron phosphide ambient 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2002, 卷号: 41, 期号: 4a, 页码: 1929-1931
Zhao YW; Dong HW; Jiao JH; Zhao JQ; Lin LY
收藏  |  浏览/下载:98/7  |  提交时间:2010/08/12
Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials 期刊论文
physical review b, 2001, 卷号: 63, 期号: 11, 页码: art.no.115324
Zhang MH; Guo LW; Li HW; Li W; Huang Q; Bao CL; Zhou JM; Liu BL; Xu ZY; Zhang YH; Lu LW
收藏  |  浏览/下载:97/7  |  提交时间:2010/08/12


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