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Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique 期刊论文
science in china series g-physics astronomy, 2003, 卷号: 46, 期号: 4, 页码: 437-440
作者:  Zhao DG
收藏  |  浏览/下载:198/6  |  提交时间:2010/08/12
Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation 期刊论文
applied physics letters, 2003, 卷号: 82, 期号: 2, 页码: 206-208
Feng ZH; Yang H; Zheng XH; Fu Y; Sun YP; Shen XM; Wang YT
收藏  |  浏览/下载:21/0  |  提交时间:2010/08/12
Effect of growth interruption on the optical properties of InAs/GaAs quantum dots 期刊论文
solid state communications, 1999, 卷号: 109, 期号: 10, 页码: 649-653
Lu ZD; Xu JZ; Zheng BZ; Xu ZY; Ge WK
收藏  |  浏览/下载:57/0  |  提交时间:2010/08/12
Exciton dynamics in self-organized InAs/GaAs quantum dots 期刊论文
acta physica sinica, 1999, 卷号: 48, 期号: 4, 页码: 744-750
Lu ZD; Li Q; Xu JZ; Zheng BZ; Xu ZY; Ge WK
收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12
ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING 期刊论文
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 4a, 页码: l418-l421
CHOI WJ; LEE S; ZHANG JM; KIM Y; KIM SK; LEE JI; KANG KN; CHO K
收藏  |  浏览/下载:9/0  |  提交时间:2010/11/17
COHERENT MODEL FOR RESONANT-TUNNELING OF ELECTRONS IN DOUBLE-QUANTUM WELLS UNDER ELECTRIC-FIELDS 期刊论文
physical review b, 1994, 卷号: 49, 期号: 8, 页码: 5434-5437
JIN SR; XU ZY; LUO JS
收藏  |  浏览/下载:17/0  |  提交时间:2010/11/15


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