Exciton dynamics in self-organized InAs/GaAs quantum dots

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	Exciton dynamics in self-organized InAs/GaAs quantum dots
	Lu ZD ; Li Q ; Xu JZ ; Zheng BZ ; Xu ZY ; Ge WK
刊名	acta physica sinica
	1999
卷号	48 期号:4 页码:744-750
关键词	THERMAL-ACTIVATION LOCALIZED EXCITONS ENERGY RELAXATION TIME PHOTOLUMINESCENCE
ISSN号	1000-3290
通讯作者	lu zd,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	using a newly-developed population mixing technique we have studied the exciton dynamics in self-organized inas/gaas quantum dots (qds). it is found that the exciton lifetime in self-organized inas/gaas qds is around 1 ns, almost independent of inas layer thickness. the temperature dependence of the exciton lifetime varies from sample to sample, but no obvious experimental evidence was found that the lifetime is related to the delta-function of density of states in qds. we have also found that the population mixing technique can be used to directly reveal the band-filling effect in the excited states of the qds.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12824]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu ZD,Li Q,Xu JZ,et al. Exciton dynamics in self-organized InAs/GaAs quantum dots[J]. acta physica sinica,1999,48(4):744-750.
APA	Lu ZD,Li Q,Xu JZ,Zheng BZ,Xu ZY,&Ge WK.(1999).Exciton dynamics in self-organized InAs/GaAs quantum dots.acta physica sinica,48(4),744-750.
MLA	Lu ZD,et al."Exciton dynamics in self-organized InAs/GaAs quantum dots".acta physica sinica 48.4(1999):744-750.