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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Structure and magnetic property of (Ga,Cr)As films with different Cr contents 期刊论文 epl, 2010, 卷号: 89, 期号: 6, 页码: art. no. 67003 Lu J (Lu J.); Meng HJ (Meng H. J.); Zhu K (Zhu K.); Chen L (Chen L.); Xu PF (Xu P. F.); Xie Z (Xie Z.); Zhao JH (Zhao J. H.) 收藏  |  浏览/下载：130/5  |  提交时间：2010/07/18 SPIN-GLASSES   Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912 Wang WZ; Deng JJ; Lu J; Sun BQ; Wu XG; Zhao JH 收藏  |  浏览/下载：215/74  |  提交时间：2010/03/08 annealing  Curie temperature  ferromagnetic materials  gallium arsenide  III-V semiconductors  magnetic susceptibility  magnetisation  manganese compounds  nanofabrication  nanostructured materials  RKKY interaction  semiconductor thin films  semimagnetic semiconductors  spin dynamics   Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109 Yu HL; Zhang XM; Wang PF; Ni HQ; Niu ZC; Lai TS 收藏  |  浏览/下载：54/4  |  提交时间：2010/03/08 circular dichroism  diffraction gratings  diffusion  gallium arsenide  homodyne detection  III-V semiconductors  spin dynamics  spin polarised transport   Lattice polarity detection of InN by circular photogalvanic effect 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902 Zhang Q; Wang XQ; He XW; Yin CM; Xu FJ; Shen B; Chen YH; Wang ZG; Ishitani Y; Yoshikawa A 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/08 III-V semiconductors  indium compounds  nondestructive testing  photoconductivity  radiation effects  semiconductor thin films  wide band gap semiconductors   Electron spin quantum beats and room temperature g factor in GaAsN 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041911 Zhao HM; Lombez L; Liu BL; Sun BQ; Xue QK; Chen DM; Marie X 收藏  |  浏览/下载：61/2  |  提交时间：2010/03/08 electron spin polarisation  gallium arsenide  g-factor  high-speed optical techniques  III-V semiconductors  semiconductor thin films  Zeeman effect   Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103516 Dou XM; Sun BQ; Xiong YH; Niu ZC; Ni HQ; Xu ZY 收藏  |  浏览/下载：99/0  |  提交时间：2010/03/08 deformation  excitons  fine structure  III-V semiconductors  indium compounds  phonons  photoluminescence  semiconductor quantum dots  spin dynamics   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：82/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏  |  浏览/下载：218/56  |  提交时间：2010/03/08 ab initio calculations  aluminium compounds  annealing  band structure  chromium  Curie temperature  density functional theory  exchange interactions (electron)  ferromagnetic materials  III-V semiconductors  semimagnetic semiconductors  total energy  vacancies (crystal)   Strain relaxation and band-gap tunability in ternary InxGa1-xN nanowires 期刊论文 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 193301 作者:  Li JB 收藏  |  浏览/下载：209/43  |  提交时间：2010/03/08 density functional theory  energy gap  enthalpy  gallium compounds  ground states  III-V semiconductors  indium compounds  Monte Carlo methods  nanowires  semiconductor quantum wires  wide band gap semiconductors   The transition from Eu3+ to Eu2+ in SiO2(Eu) thin films prepared by ion implantation and co-sputtering 期刊论文 acta physica sinica, 2001, 卷号: 50, 期号: 3, 页码: 532-535 Liu FZ; Zhu MF; Liu T; Li BC 收藏  |  浏览/下载：165/50  |  提交时间：2010/08/12 SiO2(Eu) films  XANES  SPECTROSCOPY  SILICON  VALENCE  GLASS  ER3+