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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109 Yu HL; Zhang XM; Wang PF; Ni HQ; Niu ZC; Lai TS 收藏  |  浏览/下载：54/4  |  提交时间：2010/03/08 circular dichroism  diffraction gratings  diffusion  gallium arsenide  homodyne detection  III-V semiconductors  spin dynamics  spin polarised transport   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：82/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Localized exciton dynamics in AlInGaN alloy 期刊论文 solid state communications, 2003, 卷号: 126, 期号: 8, 页码: 473-477 Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 AlInGaN  quantum dots  hopping  stretched-exponential decay  MULTIPLE-QUANTUM WELLS  LIGHT-EMITTING-DIODES  TIME-RESOLVED PHOTOLUMINESCENCE  CHEMICAL-VAPOR-DEPOSITION  THERMAL-ACTIVATION  LUMINESCENCE  TRANSITIONS  RELAXATION  SILICON  LAYERS   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 作者:  Jiang DS 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN   Photoluminescence of rapid-thermal annealed Mg-doped GaN films 期刊论文 solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157 Wang LS; Fong WK; Surya C; Cheah KW; Zheng WH; Wang ZG 收藏  |  浏览/下载：74/5  |  提交时间：2010/08/12 p-type GaN  metalorganic chemical vapor deposition  photoluminescence  X-ray diffraction  rapid-thermal annealing  P-TYPE GAN  RECOMBINATION  EMISSION  ENERGY  BANDS   Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction 期刊论文 applied physics letters, 1999, 卷号: 75, 期号: 2, 页码: 223-225 Pan Z; Wang YT; Zhuang Y; Lin YW; Zhou ZQ; Li LH; Wu RH; Wang QM 收藏  |  浏览/下载：29/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  GROWTH  ENERGY