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980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth 期刊论文
proceedings of spie - the international society for optical engineering, 2013, 卷号: 8640, 页码: 86401u
Ying Ding; Wei Ji; Jingxiang Chen; Song Zhang; Xiaoling Wang; Huolei Wang; Haiqiao Ni; Jiaoqing Pan; Bifeng Cui; Maria Ana Cataluna
收藏  |  浏览/下载：19/0  |  提交时间：2014/05/08
High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327
She-Song, H; Zhi-Chuan, N; Feng, Z; Hai-Qiao, N; Huan, Z; Dong-Hai, W; Zheng, S
收藏  |  浏览/下载：42/3  |  提交时间：2010/03/08
Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 19, 页码: art. no. 191118
Zhang JY; Cai LE; Zhang BP; Li SQ; Lin F; Shang JZ; Wang DX; Lin KC; Yu JZ; Wang QM
收藏  |  浏览/下载：25/1  |  提交时间：2010/03/08
Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots 期刊论文
Semiconductor Photonics and Technology, 2003, 卷号: 9, 期号: 1, 页码: 30-33
作者:  Niu Zhichuan
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/23
Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process 期刊论文
ieee journal of quantum electronics, 2003, 卷号: 39, 期号: 6, 页码: 716-721
作者:  Yu LJ
收藏  |  浏览/下载：31/0  |  提交时间：2010/08/12
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Niu ZC; Wang XD; Miao ZH; Feng SL
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL
收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29
A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 4, 页码: 608-610
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏  |  浏览/下载：88/5  |  提交时间：2010/08/12
Linewidth of the infrared absorption spectra due to bound-to-continuum transition in GaAs/AlxGa1-xAs multiple quantum well structures 期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 8, 页码: 1131-1133
He YP; Zhu QS; Zhong ZT; Zhang GZ; Xiao J; Cao ZP; Sun XH; Yang HZ
收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption 期刊论文
journal of applied physics, 1996, 卷号: 79, 期号: 2, 页码: 1073-1077
Yuan ZL; Xu ZY; Zheng BZ; Luo CP; Xu JZ; Ge WK; Zhang PH; Yang XP
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17

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