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CORC

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Comparison of short period InAs/GaSb superlattices on GaSb and GaAs substrates 期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 1, 页码: 23-27
作者:  Xu YQ
收藏  |  浏览/下载：217/35  |  提交时间：2010/03/08
Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 3, 页码: 1120-1123
Dou, XM; Sun, BQ; Wang, BR; Ma, SS; Zhou, R; Huang, SS; Ni, HQ; Niu, ZC
收藏  |  浏览/下载：52/2  |  提交时间：2010/03/08
Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 6, 页码: 2277-2280
Cui, JP; Wang, XF; Duan, Y; He, JX; Zeng, YP
收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08
A comparison between AlN films grown by MOCVD using dimethylethylamine alane and trimethylaluminium as the aluminium precursors 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 2, 页码: 516-518
Hu, WG (Hu Wei-Guo); Liu, XL (Liu Xiang-Lin); Zhang, PF (Zhang Pan-Feng); Zhao, FA (Zhao Feng-Ai); Jiao, CM (Jiao Chun-Mei); Wei, HY (Wei Hong-Yuan); Zhang, RQ (Zhang Ri-Qing); Wu, JJ (Wu Jie-Jun); Cong, GW (Cong Guang-Wei); Pan, Y (Pan Yi)
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/29
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载：88/0  |  提交时间：2010/04/11
1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 482-488
作者:  Wu Donghai;  Han Qin;  Peng Hongling;  Niu Zhichuan
收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23
High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 5, 页码: 659-661
Pan Z; Li LH; Du Y; Lin YW; Wu RH
收藏  |  浏览/下载：71/4  |  提交时间：2010/08/12
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文
physica e, 2000, 卷号: 8, 期号: 2, 页码: 164-169
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12
New way to enhance the uniformity of self-organized InAs quantum dots 会议论文
25th international symposium on compound semiconductors, nara, japan, oct 12-16, 1998
Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15
New way to enhance the uniformity of self-organized InAs quantum dots 期刊论文
compound semiconductors 1998, 1999, 期号: 162, 页码: 433-437
Zhu HJ; Wang H; Wang ZM; Cui LQ; Feng SL
收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12

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